Renesas Electronics - NX7637BF-AA-AZ

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NX7637BF-AA-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NX7637BF-AA-AZ
Description LASER DIODE;
Datasheet NX7637BF-AA-AZ Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
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TOLD323BBB by Toshiba

TOLD323BBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 2 V;
TOLD322CCC by Toshiba

TOLD322CCC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Minimum Operating Temperature: -30 Cel;
TOLD333S by Toshiba

TOLD333S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: .0015 V; Peak Wavelength (nm): 1310; Minimum Operating Temperature: 10 Cel; Maximum Response Time: .0000000003 s;
NX8571SC904-BA-A by Renesas Electronics

NX8571SC904-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1590;
STH91008G by Infineon Technologies

STH91008G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .12 A;
DL7032-001 by Onsemi

DL7032-001

Onsemi

DL7032-001 by Onsemi is a Laser Diode with 0.15A max forward current, 830nm peak wavelength, and -10 to 50 °C operating temp range. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
SDL9952 by Onsemi

SDL9952

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; Peak Wavelength (nm): 830; JESD-609 Code: e0;
NX8570SC358-BA-AZ by Renesas Electronics

NX8570SC358-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1535; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
TOLD323BCB by Toshiba

TOLD323BCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 80 Cel; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V;
TOLD9200(S) by Toshiba

TOLD9200(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 670; Maximum Operating Temperature: 50 Cel;
SDL3034-101 by Onsemi

SDL3034-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780;
NX6308GH-AZ by Renesas Electronics

NX6308GH-AZ

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LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000005 s; Semiconductor Material: InGaAsP;
TOLD9421(S) by Toshiba

TOLD9421(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 650;
TOLD9441MC by Toshiba

TOLD9441MC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 650; Maximum Forward Voltage: 3 V; Maximum Forward Current: .08 A; Minimum Operating Temperature: -10 Cel;
SDL3034-211 by Onsemi

SDL3034-211

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;
TOLD322BCA by Toshiba

TOLD322BCA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 80 Cel;
NX8566LE770-BC by Renesas Electronics

NX8566LE770-BC

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Laser Diodes;
DL-4146-101S by Onsemi

DL-4146-101S

Onsemi

DL-4146-101S by Onsemi is a laser diode with peak wavelength of 405nm, nominal output power of 10W, and max threshold current of 50mA. Commonly used in applications requiring optoelectronic components for through hole mounting setups.
NX8567SA405-BC by Renesas Electronics

NX8567SA405-BC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1540; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V;
NX8562LB541-CA by Renesas Electronics

NX8562LB541-CA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1554; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;