Renesas Electronics - NX8560LJ533-BC

  1. Home
  2. Renesas Electronics - NX8560LJ533-BC
NX8560LJ533-BC by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8560LJ533-BC
Description LASER DIODE; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: GaAs; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000004 s;
Datasheet NX8560LJ533-BC Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .15 A
Peak Wavelength (nm): 1553
Maximum Response Time: .00000000004 s
Maximum Operating Temperature: 70 Cel
Semiconductor Material: GaAs
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2 V
Minimum Operating Temperature: -20 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

DL-LS5005 by Onsemi

DL-LS5005

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 405; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;
CQF25C/D22 by NXP Semiconductors

CQF25C/D22

NXP Semiconductors

CQF25C/D22 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
SDL7033-111 by Onsemi

SDL7033-111

Onsemi

SDL7033-111 by Onsemi is an 890nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
CQF25C/D14 by NXP Semiconductors

CQF25C/D14

NXP Semiconductors

CQF25C/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
TOLD383S by Toshiba

TOLD383S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: .0015 V; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel;
SDL8032-101 by Onsemi

SDL8032-101

Onsemi

SDL8032-101 by Onsemi is an 850nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
NX8567SA593-BC by Renesas Electronics

NX8567SA593-BC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1559; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel;
NX8563LA581-CD-A by Renesas Electronics

NX8563LA581-CD-A

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s; Peak Wavelength (nm): 1558;
NX6309GH-AZ by Renesas Electronics

NX6309GH-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000005 s;
NX8566LE836-BC by Renesas Electronics

NX8566LE836-BC

Renesas Electronics

Laser Diodes;
NX8563LB366 by Renesas Electronics

NX8563LB366

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1537; Maximum Forward Voltage: 1.5 V;
TOLD320ACB by Toshiba

TOLD320ACB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel; Semiconductor Material: InGaAs;
NX8570SC824-BA-AZ by Renesas Electronics

NX8570SC824-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
TOLD382S by Toshiba

TOLD382S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .0000000003 s; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel;
NX8570SC6087Q-BA by Renesas Electronics

NX8570SC6087Q-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
STH81001Z by Infineon Technologies

STH81001Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V;
NX8563LA453-CD-A by Renesas Electronics

NX8563LA453-CD-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1545; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .00000000012 s; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP;
NX8570SC866D-BA by Renesas Electronics

NX8570SC866D-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1587; Semiconductor Material: InGaAsP;
NX8563LA565-CD-A by Renesas Electronics

NX8563LA565-CD-A

Renesas Electronics

LASER DIODE; Maximum Response Time: .00000000012 s; Peak Wavelength (nm): 1556; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel;
DL-4039-011 by Onsemi

DL-4039-011

Onsemi

DL-4039-011 by Onsemi is a 685nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in various environments.