Renesas Electronics - NX8563LAS549-CD-A

  1. Home
  2. Renesas Electronics - NX8563LAS549-CD-A
NX8563LAS549-CD-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8563LAS549-CD-A
Description LASER DIODE; Peak Wavelength (nm): 1555; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s;
Datasheet NX8563LAS549-CD-A Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .3 A
Peak Wavelength (nm): 1555
Maximum Response Time: .00000000012 s
Maximum Operating Temperature: 85 Cel
Semiconductor Material: InGaAsP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2 V
Minimum Operating Temperature: -20 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX8570SC675-BA-A by Renesas Electronics

NX8570SC675-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1567; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
CQF25C/D42 by NXP Semiconductors

CQF25C/D42

NXP Semiconductors

CQF25C/D42 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
NX8567SA573-CC by Renesas Electronics

NX8567SA573-CC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel;
SDL4038-011 by Onsemi

SDL4038-011

Onsemi

SDL4038-011 by Onsemi is a 645nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.
DL-3038-013 by Onsemi

DL-3038-013

Onsemi

DL-3038-013 by Onsemi is a LASER DIODE with peak wavelength of 635nm, max forward current of 0.06A, and max forward voltage of 2.5V. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications in various industries.
NX8567SAM389-CC by Renesas Electronics

NX8567SAM389-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1538; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V;
SDL8033-201 by Onsemi

SDL8033-201

Onsemi

SDL8033-201 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications like optical sensors and medical devices.
NX8501BG-BA by Renesas Electronics

NX8501BG-BA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2 V;
NX8567SA405-BC by Renesas Electronics

NX8567SA405-BC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1540; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V;
TOLD323ABC by Toshiba

TOLD323ABC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 70 Cel;
DL-3150-106 by Onsemi

DL-3150-106

Onsemi

DL-3150-106 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.06A and max operating temp of 60 °C. Ideal for applications requiring precise laser emission in through hole mounting setups.
NX8560LJ405-BC by Renesas Electronics

NX8560LJ405-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1541; Maximum Forward Current: .15 A; Semiconductor Material: GaAs;
TOLD9230(F) by Toshiba

TOLD9230(F)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 670; Semiconductor Material: GaAlInP; Maximum Operating Temperature: 50 Cel;
SDL3144-101 by Onsemi

SDL3144-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel;
TOLD322CBC by Toshiba

TOLD322CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel;
NX8567SAM541-BC by Renesas Electronics

NX8567SAM541-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1554; Maximum Response Time: .000000000125 s;
NX8571SC585-BA-AZ by Renesas Electronics

NX8571SC585-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1558;
SDL6032-101 by Onsemi

SDL6032-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel;
NX8571SC816-BA-A by Renesas Electronics

NX8571SC816-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1582; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP;
TOLD383S by Toshiba

TOLD383S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: .0015 V; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel;