Renesas Electronics - NX8566LE853-CC

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NX8566LE853-CC by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NX8566LE853-CC
Description Laser Diodes;
Datasheet NX8566LE853-CC Datasheet
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SDL3034-011 by Onsemi

SDL3034-011

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
NX8570SC6061-BA-A by Renesas Electronics

NX8570SC6061-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1606; Maximum Operating Temperature: 70 Cel;
TOLD2000MDA by Toshiba

TOLD2000MDA

Toshiba

LASER DIODE; Size: 1.8 mm; No. of Functions: 1; Shape: ROUND; Maximum Threshold Current: 40 mA; Nominal Output Power: 7 W;
TOLD320 by Toshiba

TOLD320

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 65 Cel;
NX8562LB295-CA by Renesas Electronics

NX8562LB295-CA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel;
TOLD322CCB by Toshiba

TOLD322CCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -30 Cel; Maximum Forward Current: .15 A; Maximum Operating Temperature: 80 Cel;
SDL3060-001 by Onsemi

SDL3060-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 790;
TOLD321CBB by Toshiba

TOLD321CBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -10 Cel;
STH91008G by Infineon Technologies

STH91008G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .12 A;
TOLD382S by Toshiba

TOLD382S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .0000000003 s; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel;
TOLD163 by Toshiba

TOLD163

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
TOLD9211(F) by Toshiba

TOLD9211(F)

Toshiba

LASER DIODE; Nominal Output Power: 5 W; Peak Wavelength (nm): 670; No. of Functions: 1;
DL-LS5000 by Onsemi

DL-LS5000

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 405;
SDL5032-101 by Onsemi

SDL5032-101

Onsemi

SDL5032-101 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications like optical sensors and medical devices.
DL3144-001 by Onsemi

DL3144-001

Onsemi

DL3144-001 by Onsemi is a LASER DIODE with 780nm Peak Wavelength, 0.05A Max Forward Current, and -10 to 60 °C Operating Temperature. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics.
NX8570SC6040-BA-A by Renesas Electronics

NX8570SC6040-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1604; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
TOLD322BCA by Toshiba

TOLD322BCA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 80 Cel;
STL51704G by Infineon Technologies

STL51704G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel; Spectral Bandwidth: 5 m;
CQF25C/D12 by NXP Semiconductors

CQF25C/D12

NXP Semiconductors

CQF25C/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
TOLD130 by Toshiba

TOLD130

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Forward Current: .11 A; Maximum Operating Temperature: 60 Cel;