Renesas Electronics - NX8571SA638-CA

  1. Home
  2. Renesas Electronics - NX8571SA638-CA
NX8571SA638-CA by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8571SA638-CA
Description LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .01 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
Datasheet NX8571SA638-CA Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .01 A
Peak Wavelength (nm): 1564
Maximum Operating Temperature: 70 Cel
Semiconductor Material: InGaAsP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2.5 V
Minimum Operating Temperature: -20 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NDL7740PA by Renesas Electronics

NDL7740PA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550;
SDL4034-151 by Onsemi

SDL4034-151

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel;
TOLD320ACC by Toshiba

TOLD320ACC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s;
DL-7140-201S by Onsemi

DL-7140-201S

Onsemi

DL-7140-201S by Onsemi is a Laser Diode with peak wavelength of 785nm, max forward current of 0.14A, and max operating temp of 60 °C. Ideal for applications requiring precise laser emission in medical or industrial settings.
TOLD158 by Toshiba

TOLD158

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .095 A;
STH61008N by Infineon Technologies

STH61008N

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -40 Cel; Maximum Forward Current: .12 A;
NX8570SA311-CA by Renesas Electronics

NX8570SA311-CA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
HL1511AF by Renesas Electronics

HL1511AF

Renesas Electronics

LASER DIODE; Nominal Output Power: 1 W; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 35 Cel; Maximum Threshold Current: 25 mA; Shape: RECTANGULAR;
TOLD129 by Toshiba

TOLD129

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .08 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel;
LASERDISPLPL90AHPSA1 by Infineon Technologies

LASERDISPLPL90AHPSA1

Infineon Technologies

LASER DIODE;
Q65113A2191 by Osram Opto Semiconductors

Q65113A2191

Osram Opto Semiconductors

Osram Opto Semiconductors' Q65113A2191 is a 940nm LASER DIODE with 6500W output power and 900mA threshold current. Ideal for applications requiring surface mount configuration, it operates b/w -20°C to 85°C temperatures.
TOLD320CBA by Toshiba

TOLD320CBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s;
SDL8033-001 by Onsemi

SDL8033-001

Onsemi

SDL8033-001 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications.
STH81001Z by Infineon Technologies

STH81001Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V;
NX8571SA493-BA by Renesas Electronics

NX8571SA493-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .01 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1549;
SDL7032-101 by Onsemi

SDL7032-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
DL3038-051 by Onsemi

DL3038-051

Onsemi

DL3038-051 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
DL-3147-185 by Onsemi

DL-3147-185

Onsemi

DL-3147-185 by Onsemi is a Laser Diode with 0.05A max forward current, emitting at 650nm peak wavelength. Ideal for applications requiring laser diodes, it operates b/w -10 °C to 80°C and has a max forward voltage of 2.6V.
DL-LS1018 by Onsemi

DL-LS1018

Onsemi

DL-LS1018 by Onsemi is a Laser Diode with 0.09A max forward current, peak wavelength of 675nm, and 2.6V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 60°C with through hole mounting feature.
NX8567SA393-CC by Renesas Electronics

NX8567SA393-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1539;