Renesas Electronics - NX8571SC346D-BA

  1. Home
  2. Renesas Electronics - NX8571SC346D-BA
NX8571SC346D-BA by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8571SC346D-BA
Description LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1534; Semiconductor Material: InGaAsP;
Datasheet NX8571SC346D-BA Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .3 A
Peak Wavelength (nm): 1534
Maximum Operating Temperature: 70 Cel
Semiconductor Material: InGaAsP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2.5 V
Minimum Operating Temperature: -5 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

STH81001Z by Infineon Technologies

STH81001Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V;
DL-6148-030 by Onsemi

DL-6148-030

Onsemi

DL-6148-030 by Onsemi is a 3.55mm LASER DIODE with peak wavelength of 638nm, max forward current of 0.13A, and nominal output power of 40W. Ideal for applications requiring precise laser emission in a compact form factor at temperatures ranging from -10 to 50 °C.
NX8562LF687-BA-A by Renesas Electronics

NX8562LF687-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1569; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
DL-3038-023 by Onsemi

DL-3038-023

Onsemi

DL-3038-023 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
DL-LS5005 by Onsemi

DL-LS5005

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 405; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;
NX8571SC845-BA-A by Renesas Electronics

NX8571SC845-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1584; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel;
DL-LS1034 by Onsemi

DL-LS1034

Onsemi

DL-LS1034 by Onsemi is a Laser Diode with max. forward current of 0.085A, peak wavelength of 635nm, and max. operating temp of 50 °C. Ideal for applications requiring precise laser emission such as medical devices, optical communication systems, and industrial alignment equipment.
TOLD320AAA by Toshiba

TOLD320AAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s;
NX8567SAS318-CC by Renesas Electronics

NX8567SAS318-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s;
NX8570SA389-BA by Renesas Electronics

NX8570SA389-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1539; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel;
NX8566LE295-CC by Renesas Electronics

NX8566LE295-CC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V;
TOLD9442M(TR) by Toshiba

TOLD9442M(TR)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 3 V; Peak Wavelength (nm): 650; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP;
NX8567SA473-BC by Renesas Electronics

NX8567SA473-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1547; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s;
NX8567SAM342-CC by Renesas Electronics

NX8567SAM342-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1534; Maximum Response Time: .000000000125 s;
DL-LS1060 by Onsemi

DL-LS1060

Onsemi

DL-LS1060 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and 3V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 70°C, featuring through hole mounting.
TOLD157 by Toshiba

TOLD157

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .095 A; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel;
NX8571SC497-BA by Renesas Electronics

NX8571SC497-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1549; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
NX8571SC921-BA-A by Renesas Electronics

NX8571SC921-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1592;
NX8565LE921-CC by Renesas Electronics

NX8565LE921-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1592;
NX8565LE493-CC by Renesas Electronics

NX8565LE493-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: .1 A; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 2 V;