Renesas Electronics - PH313

  1. Home
  2. Renesas Electronics - PH313
PH313 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number PH313
Description Photo Diodes; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
Datasheet PH313 Datasheet
NAME DESCRIPTION
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MICROFC-SMA-60035-GEVB-TR by Onsemi

MICROFC-SMA-60035-GEVB-TR

Onsemi

AVALANCHE PHOTODIODE;
BPW34FSR18R by Osram Opto Semiconductors

BPW34FSR18R

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FSR18R is a single PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has a min reverse breakdown voltage of 16V, and nominal light current of 0.04mA. Ideal for applications requiring infrared detection in compact spaces.
124EATC by Broadcom

124EATC

Broadcom

Photo Diodes;
SFH2212 by Infineon Technologies

SFH2212

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 10 nA; Semiconductor Material: InGaAs;
S5106 by Hamamatsu Photonics Kk

S5106

Hamamatsu Photonics Kk

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 5 nA; Maximum Operating Temperature: 100 Cel; Nominal Light Current: .027 mA; Peak Wavelength (nm): 960;
SFH219 by Infineon Technologies

SFH219

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Maximum Dark Current: .005 nA; Maximum Reverse Voltage: 7 V;
SFH229FA by Osram Opto Semiconductors

SFH229FA

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Reverse Voltage: 20 V; Semiconductor Material: Silicon; Configuration: SINGLE;
MICROFR-10010-MLP-TR by Onsemi

MICROFR-10010-MLP-TR

Onsemi

MICROFR-10010-MLP-TR by Onsemi is a single avalanche photodiode with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.25V, and max dark current of 6nA. Ideal for surface mount applications in optoelectronics.
MICROFJ-30020-TSV-TR1 by Onsemi

MICROFJ-30020-TSV-TR1

Onsemi

MICROFJ-30020-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in temperature-controlled environments.
MICROFJ-40035-TSV-TR1 by Onsemi

MICROFJ-40035-TSV-TR1

Onsemi

MICROFJ-40035-TSV-TR1 by Onsemi is a 3.93mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 4000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
NDL5500C by Renesas Electronics

NDL5500C

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Reverse Voltage: 120 V; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -40 Cel;
NDL5131PC by Renesas Electronics

NDL5131PC

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Germanium;
NDL2104 by Renesas Electronics

NDL2104

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -65 Cel; Maximum Reverse Voltage: 100 V; Maximum Response Time: .000000004 s;
MICROFC-SMTPA-30050-GEVB by Onsemi

MICROFC-SMTPA-30050-GEVB

Onsemi

AVALANCHE PHOTODIODE;
NR8800CS-BB-AZ by Renesas Electronics

NR8800CS-BB-AZ

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 30 nA;
SC10 by Udt Sensors

SC10

Udt Sensors

SC10 by Udt Sensors is a PIN photodiode with max operating temp of 55°C and min of -10°C. It has a max reverse voltage of 50V, made from silicon, and features through hole mounting. Ideal for optoelectronic applications requiring precise light detection in various environments.
SFH235FA by Infineon Technologies

SFH235FA

Infineon Technologies

SFH235FA by Infineon Technologies is a PIN photodiode with max response time of 0.00000002s and max reverse voltage of 32V. Operating temp ranges from -40°C to 80°C, making it ideal for optoelectronic applications requiring fast and precise light detection.
NDL5104P by Renesas Electronics

NDL5104P

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .0000000008 s; Semiconductor Material: Germanium;
BPW83 by Vishay Intertechnology

BPW83

Vishay Intertechnology

Vishay Intertechnology's BPW83 is a 6.4mm PIN photodiode with peak wavelength of 950nm. It operates b/w -30 to 80°C, has a reverse breakdown voltage of 60V, and response time of 0.00000005s. Ideal for IR applications, it features through-hole mounting and matte tin finish.
SFH235FA by Osram Opto Semiconductors

SFH235FA

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Reverse Voltage: 32 V; Shape: RECTANGULAR; Semiconductor Material: Silicon;