Renesas Electronics - PH5503A2NA1-Y-A

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PH5503A2NA1-Y-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number PH5503A2NA1-Y-A
Description Photo Transistors;
Datasheet PH5503A2NA1-Y-A Datasheet
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TIL613 by Texas Instruments

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TIL613 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With a response time of 0.000008s, it's ideal for applications requiring precise light detection in various environments.
SML-810TBT86 by ROHM

SML-810TBT86

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PHOTO TRANSISTOR; Terminal Finish: GOLD OVER NICKEL; JESD-609 Code: e4;
SFH303FA-4 by Infineon Technologies

SFH303FA-4

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PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel;
BPY62-4 by Siemens

BPY62-4

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PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;
SFH309FA-5 by Infineon Technologies

SFH309FA-5

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SFH309FA-5 by Infineon Technologies is a phototransistor with peak wavelength of 900nm. It has a max operating temperature of 100°C and min of -55°C. Ideal for applications requiring fast response time, such as optical sensors and light barriers.
QSE113 by Qt Optoelectronics

QSE113

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QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
TPS608A by Toshiba

TPS608A

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PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .1 mA; Additional Features: SIDE VIEW; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 820;
PT42-21B/TR8 by Everlight Electronics

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PT42-21B/TR8 by Everlight Electronics is a 1.8mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 3mA.
SFH320FA-4 by Infineon Technologies

SFH320FA-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900;
TIL412 by Texas Instruments

TIL412

Texas Instruments

TIL412 by Texas Instruments is a PHOTO DARLINGTON phototransistor with max operating temp of 85°C and min of -40°C. It has max dark current of 100nA, response time of 0.001s, and on state current of 0.0001A. Ideal for optoelectronic applications requiring precise light detection in various environments.
QTLP610CPD by Onsemi

QTLP610CPD

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The Onsemi QTLP610CPD is a single phototransistor with peak wavelength of 860nm. It operates b/w -25 °C to 85°C, with min collector-emitter breakdown voltage of 30V. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2mm.
TEMT1020 by Vishay Telefunken

TEMT1020

Vishay Telefunken

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum Dark Current: 200 nA; Maximum Response Time: .000002 s;
TPS613-CD by Toshiba

TPS613-CD

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 720; Nominal Light Current: .06 mA; Maximum Operating Temperature: 75 Cel; Configuration: SINGLE;
BPV11 by Vishay Intertechnology

BPV11

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Vishay Intertechnology's BPV11 is a 5mm round phototransistor with peak wavelength of 850nm. It has nominal light current of 10mA and max dark current of 50nA. Ideal for applications requiring fast response time, it features min collector-emitter breakdown voltage of 70V and matte tin terminal finish.
SFH317F4 by Infineon Technologies

SFH317F4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000015 s;
SFH310 by Infineon Technologies

SFH310

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SFH310 by Infineon Technologies is a phototransistor with peak wavelength of 780nm. It can operate b/w -55°C to 100°C, with max power dissipation of 0.165W and dark current of 5nA. Ideal for applications requiring fast response time (0.000007s) and on-state current up to 0.05A, featuring through-hole mounting.
TPS612 by Toshiba

TPS612

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Size: 3 mm; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 20 V;
TPS606-C by Toshiba

TPS606-C

Toshiba

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 100 nA; Configuration: SINGLE; No. of Functions: 1;
SFH314FA-3 by Infineon Technologies

SFH314FA-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 870;
QSE114 by Qt Optoelectronics

QSE114

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;