Renesas Electronics - PH5503A2NA1-Y-A

  1. Home
  2. Renesas Electronics - PH5503A2NA1-Y-A
PH5503A2NA1-Y-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number PH5503A2NA1-Y-A
Description Photo Transistors;
Datasheet PH5503A2NA1-Y-A Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TPS612 by Toshiba

TPS612

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Size: 3 mm; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 20 V;
BPY62-2 by Infineon Technologies

BPY62-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel;
SFH317F2 by Infineon Technologies

SFH317F2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;
PT100MF0MP by Sharp Corporation

PT100MF0MP

Sharp Corporation

PT100MF0MP by Sharp Corporation is a 1.6mm round phototransistor with a peak wavelength of 910nm. It operates in temperatures ranging from -30°C to 85°C and has a min collector-emitter breakdown voltage of 35V. This phototransistor is commonly used for optoelectronic applications requiring infrared detection.
SFH317-4 by Infineon Technologies

SFH317-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;
TPS615-AB by Toshiba

TPS615-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 100 nA; Configuration: SINGLE;
TPS616-C by Toshiba

TPS616-C

Toshiba

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Minimum Collector-emitter Breakdown Voltage: 30 V; Nominal Light Current: .03 mA; Maximum Operating Temperature: 85 Cel;
TIL66 by Texas Instruments

TIL66

Texas Instruments

TIL66 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It has max operating temp of 85°C and min operating temp of -40°C. With max power dissipation of 0.05W, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
PH101 by Renesas Electronics

PH101

Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Peak Wavelength (nm): 850;
TIL602 by Texas Instruments

TIL602

Texas Instruments

TIL602 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and infrared range detection in through-hole mounting configurations.
SFH3401-3 by Infineon Technologies

SFH3401-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 85 Cel;
1N5724 by Texas Instruments

1N5724

Texas Instruments

1N5724 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response times and IR detection in through-hole mounting setups.
L14N1 by Renesas Electronics

L14N1

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .00001 s; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;
QSE113 by Fairchild Semiconductor

QSE113

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 880; No. of Functions: 1; Maximum Operating Temperature: 100 Cel;
SFH3400-3 by Infineon Technologies

SFH3400-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Maximum Dark Current: 200 nA; JESD-609 Code: e0;
TIL623 by Texas Instruments

TIL623

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
ASDL-6770-C22 by Broadcom

ASDL-6770-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel; Shape: ROUND;
SFH302 by Infineon Technologies

SFH302

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 880; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
SFH300-2 by Infineon Technologies

SFH300-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 850;
BP103-6 by Infineon Technologies

BP103-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;