Renesas Electronics - R1EV58064BDARBI#B0

R1EV58064BDARBI#B0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number R1EV58064BDARBI#B0
Description EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;
Datasheet R1EV58064BDARBI#B0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 8KX8
Maximum Seated Height: 5.7 mm
Programming Voltage (V): 3
Minimum Supply Voltage (Vsup): 2.7 V
Surface Mount: NO
Maximum Write Cycle Time (tWC): 10 ms
No. of Terminals: 28
No. of Words: 8192 words
Terminal Position: DUAL
Package Style (Meter): IN-LINE
Technology: CMOS
JESD-30 Code: R-PDIP-T28
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: DIP
Width: 15.24 mm
Moisture Sensitivity Level (MSL): 1
Memory Density: 65536 bit
Memory IC Type: EEPROM
Minimum Operating Temperature: -40 Cel
Memory Width: 8
No. of Functions: 1
Length: 35.6 mm
Maximum Access Time: 100 ns
No. of Words Code: 8K
Nominal Supply Voltage / Vsup (V): 3
Parallel or Serial: PARALLEL
Terminal Pitch: 2.54 mm
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 5.5 V
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