Renesas Electronics - RJH60A01RDPD-A0#J2

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RJH60A01RDPD-A0#J2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJH60A01RDPD-A0#J2
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Voltage: 30 V;
Datasheet RJH60A01RDPD-A0#J2 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 29.4 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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