RJH60M1DPE-00#J3 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	RJH60M1DPE-00#J3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Collector Current (IC): 16 A; Maximum Gate-Emitter Threshold Voltage: 7 V;
Datasheet	RJH60M1DPE-00#J3 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	16 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	7 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Nominal Turn Off Time (toff):	160 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	52 W
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	43 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	30 V
Case Connection:	COLLECTOR

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