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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJK0223DNS-00-J5 |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Drain-Source On Resistance: .0137 ohm; No. of Elements: 2; |
| Datasheet | RJK0223DNS-00-J5 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 14 A |
| Maximum Pulsed Drain Current (IDM): | 56 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 7 |
| Maximum Power Dissipation (Abs): | 10 W |
| Terminal Position: | QUAD |
| Package Style (Meter): | FLATPACK |
| JESD-30 Code: | R-XQFP-N7 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0137 ohm |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 25 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 16 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
