Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJK03B9DPA-00-J53 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; JESD-609 Code: e4; No. of Terminals: 5; |
| Datasheet | RJK03B9DPA-00-J53 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 30 A |
| Maximum Pulsed Drain Current (IDM): | 120 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | Nickel/Palladium/Gold (Ni/Pd/Au) |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 25 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-XDSO-N5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0151 ohm |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 30 A |
