Renesas Electronics - RJK03C2DPB-00-J5

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RJK03C2DPB-00-J5 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK03C2DPB-00-J5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified;
Datasheet RJK03C2DPB-00-J5 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 55 A
Maximum Pulsed Drain Current (IDM): 220 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0035 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 55 A
Peak Reflow Temperature (C): NOT SPECIFIED
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