Renesas Electronics - RJK0451DPB-00-J5

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RJK0451DPB-00-J5 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK0451DPB-00-J5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Terminal Finish: NICKEL PALLADIUM GOLD; Transistor Application: SWITCHING;
Datasheet RJK0451DPB-00-J5 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 35 A
Maximum Pulsed Drain Current (IDM): 140 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 4
Maximum Power Dissipation (Abs): 45 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0096 ohm
Avalanche Energy Rating (EAS): 24.5 mJ
Other Names: RJK0451DPB-00#J5TR
RJK0451DPB-00#J5DKR
RJK0451DPB00J5
RJK0451DPB-00#J5CT
-1161-RJK0451DPB-00#J5CT
RJK0451DPB-00#J5-ND
Maximum Feedback Capacitance (Crss): 140 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 35 A
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