Renesas Electronics - RJK4502DJE-00#Z0

  1. Home
  2. Renesas Electronics - RJK4502DJE-00#Z0
RJK4502DJE-00#Z0 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number RJK4502DJE-00#Z0
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .9 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 2.8 A;
Datasheet RJK4502DJE-00#Z0 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .9 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.8 A
Maximum Drain Current (Abs) (ID): 2.8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBF170 by Fairchild Semiconductor

MMBF170

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .5 A; Transistor Application: SWITCHING;
BSS123 by National Semiconductor

BSS123

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
FDC604P by Onsemi

FDC604P

Onsemi

FDC604P by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 5.5A.
BSS123L by Fairchild Semiconductor

BSS123L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V; JEDEC-95 Code: TO-236AB;
SI2301BDS-T1-E3 by Vishay Intertechnology

SI2301BDS-T1-E3

Vishay Intertechnology

SI2301BDS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.2A ID, and 0.1 ohm RDS(on). Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
2N7002 by Zetex Plc

2N7002

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
FDN338P by Onsemi

FDN338P

Onsemi

FDN338P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.6A and 0.115 ohm on-resistance, operating in enhancement mode at up to 150°C. This small outline transistor with GULL WING terminals is designed for high power dissipation (0.5W) in surface mount configurations.
FDS9431A by Fairchild Semiconductor

FDS9431A

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
2N7002BKV,115 by NXP Semiconductors

2N7002BKV,115

NXP Semiconductors

NXP Semiconductors' 2N7002BKV,115 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.34A Drain Current, and 1.6 ohm On Resistance. With a max temp of 150°C, it's ideal for small outline packages in ENHANCEMENT MODE circuits.
FDC6321C by Fairchild Semiconductor

FDC6321C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Transistor Application: SWITCHING; Terminal Position: DUAL;
FDV304P by Onsemi

FDV304P

Onsemi

The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
NTR4101PT1G by Onsemi

NTR4101PT1G

Onsemi

NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
IRF7820TRPBF by Infineon Technologies

IRF7820TRPBF

Infineon Technologies

IRF7820TRPBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It has 3.7A Drain Current, 0.078 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor in GULL WING package is designed for ENHANCEMENT MODE operation.
DMN5L06K-7 by Diodes Incorporated

DMN5L06K-7

Diodes Incorporated

DMN5L06K-7 by Diodes Inc. is a N-channel FET for switching applications. It has a 50V DS breakdown voltage, 0.3A max drain current, and 3 ohm max on-resistance. With a small outline package style, it operates b/w -65 to 150 °C and meets MIL-STD-202 standards.
FDS4935BZ by Fairchild Semiconductor

FDS4935BZ

Fairchild Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
ZVP2106AM1 by Diodes Incorporated

ZVP2106AM1

Diodes Incorporated

ZVP2106AM1 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Utilizes METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with GULL WING terminals.
BSS139H6906XTSA1 by Infineon Technologies

BSS139H6906XTSA1

Infineon Technologies

BSS139H6906XTSA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.1A ID, and 30Ω RDS(ON). Ideal for DEPLETION MODE operation in applications requiring low feedback capacitance (3.3pF), such as small signal amplification in electronic circuits.
2N7002 by Infineon Technologies

2N7002

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002T by Fairchild Semiconductor

2N7002T

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Package Style (Meter): SMALL OUTLINE;
2N7002DWK-7 by Diodes Incorporated

2N7002DWK-7

Diodes Incorporated

Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;