Renesas Electronics - RJP1CV3DPH-E0#T2

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RJP1CV3DPH-E0#T2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP1CV3DPH-E0#T2
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 63.4 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel;
Datasheet RJP1CV3DPH-E0#T2 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 15 A
Maximum Power Dissipation (Abs): 63.4 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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