RJP4009ANS-01#Q6 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	RJP4009ANS-01#Q6
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 150 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	RJP4009ANS-01#Q6 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	150 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	1.2 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.8 W
Maximum Collector-Emitter Voltage:	400 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	6 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	9 V

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