Renesas Electronics - RJP5001APP-M0-T2

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RJP5001APP-M0-T2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP5001APP-M0-T2
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Collector-Emitter Voltage: 500 V; Maximum Gate-Emitter Threshold Voltage: 2.7 V; Maximum Gate-Emitter Voltage: 17 V;
Datasheet RJP5001APP-M0-T2 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 45 W
Maximum Collector-Emitter Voltage: 500 V
Maximum Gate-Emitter Threshold Voltage: 2.7 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 17 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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