Renesas Electronics - RKP450KE#R0

  1. Home
  2. Renesas Electronics - RKP450KE#R0
RKP450KE#R0 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number RKP450KE#R0
Description PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 1 V; Minimum Breakdown Voltage: 30 V; Diode Resistive Test Frequency: 100 MHz; Maximum Operating Temperature: 125 Cel;
Datasheet RKP450KE#R0 Datasheet
NAME DESCRIPTION
Diode Resistive Test Frequency: 100 MHz
Reverse Test Voltage: 1 V
Diode Type: PIN DIODE
Minimum Breakdown Voltage: 30 V
Diode Resistive Test Current: 10 mA
Maximum Operating Temperature: 125 Cel
Maximum Diode Forward Resistance: 1.3 ohm
Sub-Category: PIN Diodes
Surface Mount: YES
Nominal Diode Capacitance: .35 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BAP27-01 by NXP Semiconductors

BAP27-01

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
JDP2S01E by Toshiba

JDP2S01E

Toshiba

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1SV263-TL-E by Onsemi

1SV263-TL-E

Onsemi

1SV263-TL-E by Onsemi is a PIN diode with TIN BISMUTH finish. It has a max reflow time of 30s at 260 °C peak temperature. Utilizes POSITIVE-INTRINSIC-NEGATIVE tech in applications like RF switches and attenuators.
CLA4607-219 by Isolink

CLA4607-219

Isolink

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAP64Q by NXP Semiconductors

BAP64Q

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR64-05E6327 by Infineon Technologies

BAR64-05E6327

Infineon Technologies

BAR64-05E6327 by Infineon Technologies is a PIN diode with common cathode, 2 elements, and 0.35 pF max capacitance. It operates in the S band frequency range and is suitable for applications like attenuators and switching due to its 20 ohm forward resistance and 150°C max temperature.
MMBV3401LT3 by Onsemi

MMBV3401LT3

Onsemi

MMBV3401LT3 by Onsemi is a PIN diode with a max forward resistance of 0.7 ohm and breakdown voltage of 35 V, suitable for switching applications in very high frequency bands. It features a small outline package style, dual terminal position, and operates at up to 125 °C temperature with tin/lead finish.
BAR9002LRHE6327XTSA1 by Infineon Technologies

BAR9002LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR6304E6327HTSA1 by Infineon Technologies

BAR6304E6327HTSA1

Infineon Technologies

Infineon's BAR6304E6327HTSA1 is a PIN diode with 2 elements, 0.3 pF capacitance, and 2 ohm forward resistance. It operates in S band frequencies for switching applications at up to 150°C. The diode features a positive-intrinsic-negative technology, Gull Wing terminals, and a breakdown voltage of 50V.
CLA4607-085LF by Skyworks Solutions

CLA4607-085LF

Skyworks Solutions

CLA4607-085LF by Skyworks Solutions is a PIN diode with 0.35 pF capacitance, 2 ohm forward resistance, and 1.3 W power dissipation. It is used as a limiter in applications requiring breakdown voltage of 180V, operating temperature range from -55 to 150 °C, and Schottky technology for high performance.
BAR64-03W by Infineon Technologies

BAR64-03W

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BXY42-T1(P) by Infineon Technologies

BXY42-T1(P)

Infineon Technologies

PIN DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1SV248 by Onsemi

1SV248

Onsemi

PIN DIODE; Surface Mount: YES; Minimum Breakdown Voltage: 50 V; Maximum Diode Forward Resistance: 4.5 ohm; Nominal Diode Capacitance: .23 pF;
BXY44-FPH by Infineon Technologies

BXY44-FPH

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
UM7512CR by Microchip Technology

UM7512CR

Microchip Technology

UM7512CR by Microchip Technology is a PIN diode with 1 pF capacitance, 1 ohm forward resistance, and 10 W power dissipation. Ideal for attenuator and switching applications due to its positive-intrinsic-negative technology and silicon material. Package style is post/stud mount with tin lead finish.
BAP1321-04 by NXP Semiconductors

BAP1321-04

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAP50-03,115 by NXP Semiconductors

BAP50-03,115

NXP Semiconductors

The NXP Semiconductors BAP50-03,115 is a PIN diode with a max forward resistance of 5 ohm and diode capacitance of 0.55 pF. It operates b/w -65 to 150 °C and has a breakdown voltage of 50 V. Ideal for RF switches, attenuators, and phase shifters in communication systems.
BAP1321-03,115 by NXP Semiconductors

BAP1321-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR15-1 by Infineon Technologies

BAR15-1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MPN3700RLRA by Onsemi

MPN3700RLRA

Onsemi

The Onsemi MPN3700RLRA is a PIN diode with 1 pF capacitance, 1 ohm forward resistance, and 200V breakdown voltage. It operates in the very high-frequency band for switching applications at up to 125 °C. The diode features a cylindrical package with tin-lead terminals in a through-hole configuration.