Renesas Electronics - RKS150KK#R1

MV104G by Onsemi is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and max power dissipation of 0.28 W. Ideal for applications requiring precise voltage control in RF circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Toshiba 1SV290 is a varactor diode with a max reverse current of 0.01 uA and a min breakdown voltage of 30 V. Its nominal capacitance is 45.25 pF, making it ideal for applications requiring variable capacitance such as in RF tuning circuits or frequency modulators. The diode's small outline package and surface mount capability make it suitable for compact electronic devices operating at temperatures up to 125°C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 133; Maximum Repetitive Peak Reverse Voltage: 12 V; Nominal Diode Capacitance: .9 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 2.7 pF; Maximum Repetitive Peak Reverse Voltage: 22 V; Minimum Quality Factor: 2000;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LV2205RL by Onsemi is a Varactor Diode with 15pF capacitance, 25V breakdown voltage, and 400 min quality factor. It is ideal for applications requiring variable capacitance diodes in temperatures up to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBV409LT1 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200 and nominal capacitance of 29 pF. It operates in the very high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.

Infineon's BB659C02VH7902XTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 min capacitance ratio. Ideal for very high frequency applications, it operates b/w -55°C to 150°C in small outline SMD package.

BB241 by NXP Semiconductors is a single, surface-mount varactor diode designed for very high frequency applications. It features a max reverse current of 0.01 µA and operates up to 100 °C with a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, it offers excellent capacitance variation.

The Onsemi MV209RLRP is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this single-configured diode has a max power dissipation of 0.2 W. Its through-hole terminal form and silicon element material make it suitable for various RF tuning circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;