RQA0005MXTL-E by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	RQA0005MXTL-E
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-F3;
Datasheet	RQA0005MXTL-E Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	20
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.8 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	9 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	16 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.8 A
Peak Reflow Temperature (C):	260

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