Renesas Electronics - RQJ0302NGDQA#H6

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RQJ0302NGDQA#H6 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RQJ0302NGDQA#H6
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet RQJ0302NGDQA#H6 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .8 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.2 A
Maximum Drain Current (Abs) (ID): 2.2 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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