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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | RQM2201DNS#P1 |
Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (Abs) (ID): 2 A; Maximum Drain Current (ID): 2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
Datasheet | RQM2201DNS#P1 Datasheet |
NAME | DESCRIPTION |
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Maximum Power Dissipation (Abs): | 1.5 W |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (ID): | 2 A |
Maximum Drain Current (Abs) (ID): | 2 A |
Sub-Category: | FET General Purpose Power |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |