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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | TBB1012MM |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; Operating Mode: DUAL GATE, DEPLETION MODE; |
| Datasheet | TBB1012MM Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 15 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Feedback Capacitance (Crss): | 1.5 pF |
| Maximum Drain Current (ID): | .03 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 6 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, DEPLETION MODE |
| Additional Features: | LOW NOISE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Moisture Sensitivity Level (MSL): | 1 |
