Renesas Electronics - TSE2004GB2C0NCG8

TSE2004GB2C0NCG8 by Renesas Electronics

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	TSE2004GB2C0NCG8
Description	MEMORY CIRCUIT; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-609 Code: e3;
Datasheet	TSE2004GB2C0NCG8 Datasheet

TSE2004GB2C0NCG8 Technical Details

NAME	DESCRIPTION
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Peak Reflow Temperature (C):	260
Memory IC Type:	MEMORY CIRCUIT
Terminal Finish:	Tin (Sn)
JESD-609 Code:	e3
Moisture Sensitivity Level (MSL):	1

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