Renesas Electronics - UPA1857GR-9JG

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UPA1857GR-9JG by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA1857GR-9JG
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 15.2 A; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 3.8 A;
Datasheet UPA1857GR-9JG Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 33 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.8 A
Maximum Pulsed Drain Current (IDM): 15.2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .095 ohm
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