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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | UPA1870BGR-9JG-E1-A |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 6 A; Terminal Finish: TIN BISMUTH; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | UPA1870BGR-9JG-E1-A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 2 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 6 A |
| Maximum Drain Current (Abs) (ID): | 6 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| JESD-609 Code: | e6 |









