Renesas Electronics - UPA1950TE(0)-T1-AT

  1. Home
  2. Renesas Electronics - UPA1950TE(0)-T1-AT
UPA1950TE(0)-T1-AT by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA1950TE(0)-T1-AT
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: MATTE TIN; Maximum Drain Current (ID): 2.5 A;
Datasheet UPA1950TE(0)-T1-AT Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.15 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.5 A
Maximum Drain Current (Abs) (ID): 2.5 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): 260
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSR16 by Philips Semiconductors

BSR16

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): .6 A;
BC337-16 by Itt Components

BC337-16

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BD140 by Inchange Semiconductor

BD140

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N7002T by Transys Electronics

2N7002T

Transys Electronics

Other Transistors; JESD-609 Code: e0; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): 30;
BC546B by Shanghai Lunsure Electronic Technology

BC546B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2219A by Comset Semiconductors

2N2219A

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2222A by Transistor & Electronic

2N2222A

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
TIP41C by Intersil

TIP41C

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC548 by Texas Instruments

BC548

Texas Instruments

BC548 by Texas Instruments is an NPN transistor with a max power dissipation of 0.625W and min DC current gain of 110. It operates at up to 150°C, handles a max collector current of 0.1A, and has a transition frequency of 150MHz. Ideal for amplification circuits in various electronic applications.
TIP110 by Panasonic

TIP110

Panasonic

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N7002W by Secos

2N7002W

Secos

Other Transistors;
IRF640 by Weitron Technology

IRF640

Weitron Technology

Other Transistors;
TIP29C by Panasonic

TIP29C

Panasonic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP147 by Philips Semiconductors

TIP147

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
BC857B by Philips Semiconductors

BC857B

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC557B by Shanghai Lunsure Electronic Technology

BC557B

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
2N2222A by Semiconductors

2N2222A

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-40 by Shanghai Lunsure Electronic Technology

BC817-40

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP42C by Semitronics

TIP42C

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
D44H11 by General Electric Solid State

D44H11

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;