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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | UPA1970TE-T1-AT |
Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; |
Datasheet | UPA1970TE-T1-AT Datasheet |
NAME | DESCRIPTION |
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Maximum Power Dissipation (Abs): | 1.15 W |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (ID): | 2.2 A |
Maximum Drain Current (Abs) (ID): | 2.2 A |
Sub-Category: | FET General Purpose Power |
Peak Reflow Temperature (C): | 260 |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |