Renesas Electronics - UPA2354T1G-E4-A

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UPA2354T1G-E4-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2354T1G-E4-A
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .75 W; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY;
Datasheet UPA2354T1G-E4-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .75 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: S-PBGA-B4
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
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