UPA2465T1Q-E1-AX by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA2465T1Q-E1-AX
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 8;
Datasheet	UPA2465T1Q-E1-AX Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.5 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0245 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	6.5 A

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