UPA2736GR-E1-AX by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA2736GR-E1-AX
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-30 Code: R-PDSO-G8; No. of Elements: 1;
Datasheet	UPA2736GR-E1-AX Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	14 A
Maximum Pulsed Drain Current (IDM):	140 A
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0135 ohm
Avalanche Energy Rating (EAS):	19.6 mJ
Other Names:	-1161-UPA2736GR-E1-AXCT
Maximum Feedback Capacitance (Crss):	1450 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	30 V

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