Renesas Electronics - UPA502CT-T1-A

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UPA502CT-T1-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA502CT-T1-A
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Form: GULL WING; Maximum Drain Current (ID): .1 A;
Datasheet UPA502CT-T1-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 2 pF
Maximum Drain Current (ID): .1 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 5
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .3 W
Maximum Drain-Source On Resistance: 2.7 ohm
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