Renesas Electronics - UPA502T

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UPA502T by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA502T
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet UPA502T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .1 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 5
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .1 A
Maximum Drain-Source On Resistance: 30 ohm
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