Renesas Electronics - UPA509TA-T1-AT

  1. Home
  2. Renesas Electronics - UPA509TA-T1-AT
UPA509TA-T1-AT by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA509TA-T1-AT
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION; Terminal Finish: MATTE TIN;
Datasheet UPA509TA-T1-AT Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .2 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT3904 by Philips Semiconductors

MMBT3904

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
MJE340 by Inchange Semiconductor

MJE340

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
MJE3055T by Samsung

MJE3055T

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP125 by Inchange Semiconductor

TIP125

Inchange Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BC846 by Sinyork

BC846

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
BD243C by General Electric Solid State

BD243C

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
TIP117 by Panasonic

TIP117

Panasonic

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
MMBT3904LT1 by Forward International Electronics

MMBT3904LT1

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
TIP125 by North American Philips Discrete Products Div

TIP125

North American Philips Discrete Products Div

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
BC337-40 by Tt Electronics Plc

BC337-40

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250;
TIP112 by Semitronics

TIP112

Semitronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
BD243C by Mospec Semiconductor

BD243C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
BD139 by Comset Semiconductors

BD139

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP111 by National Semiconductor

TIP111

National Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
TIP122 by Toshiba

TIP122

Toshiba

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
MMBT3906 by Unisonic Technologies

MMBT3906

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
TIP111 by Semitronics

TIP111

Semitronics

TIP111 by Semitronics is an NPN Darlington transistor with a max power dissipation of 50W and a min DC current gain of 500. It can handle a max collector current of 4A and operates at temperatures up to 150°C. This transistor is commonly used in various applications requiring high power amplification and switching capabilities.
TIP111 by Thomson Consumer Electronics

TIP111

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
BC856B by Allegro MicroSystems

BC856B

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP120 by Thomson Consumer Electronics

TIP120

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;