Renesas Electronics - UPA74HA-P

  1. Home
  2. Renesas Electronics - UPA74HA-P
UPA74HA-P by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA74HA-P
Description NPN; Surface Mount: NO; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 200; Maximum Operating Temperature: 125 Cel; Transistor Element Material: SILICON;
Datasheet UPA74HA-P Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 200
No. of Terminals: 7
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 125 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3906 by Hi-tron Semiconductor

2N3906

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Bytesonic Electronics

MMBT2222A

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
2N2219A by Swampscott Electronics

2N2219A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847C,215 by Nexperia

BC847C,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N3906 by Fairchild Semiconductor

2N3906

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2222A by Digitron Semiconductors

2N2222A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBTA56LT1G by Onsemi

MMBTA56LT1G

Onsemi

MMBTA56LT1G by Onsemi is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.3W, hFE of 100, and fT of 50MHz. Ideal for amplifier applications due to its small outline package style and operating temperature range from -55°C to 150°C.
2N2222A by General Transistor

2N2222A

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3904 by Jiangsu Changjiang Electronics Technology

MMBT3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
2N2222A by International Devices

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC858B,215 by NXP Semiconductors

BC858B,215

NXP Semiconductors

BC858B,215 by NXP Semiconductors is a PNP BJT for switching applications. With VCEsat of 0.65V and hFE of 220, it operates at max 150°C with IC of 0.1A. Its small outline package makes it suitable for surface mount designs.
BC847C by Rectron

BC847C

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;
MMBT2907A-7-F by Diodes Incorporated

MMBT2907A-7-F

Diodes Incorporated

Diodes Inc. MMBT2907A-7-F is a PNP BJT transistor with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package.
BC817-40,235 by NXP Semiconductors

BC817-40,235

NXP Semiconductors

NXP Semiconductors' BC817-40,235 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.
BC817-40 by Vishay Semiconductors

BC817-40

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250;
BC547CTFR by Onsemi

BC547CTFR

Onsemi

BC547CTFR by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, min. DC current gain of 420, and max. power dissipation of 0.625W. It is commonly used for switching applications due to its single configuration and cylindrical package shape.
2N2905A by Semicoa

2N2905A

Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC547B by Kec

BC547B

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT2907A by Electronic Devices

MMBT2907A

Electronic Devices

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
2N3906 by General Semiconductor

2N3906

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;