Renesas Electronics - UPA804TGB-T1

  1. Home
  2. Renesas Electronics - UPA804TGB-T1
UPA804TGB-T1 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA804TGB-T1
Description NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .06 A; Minimum DC Current Gain (hFE): 100;
Datasheet UPA804TGB-T1 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 3000 MHz
Maximum Collector Current (IC): .06 A
Maximum Power Dissipation (Abs): .16 W
Maximum Operating Temperature: 125 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3904 by Itt Components

2N3904

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BDX53C by Iskra Semic Capacitors Industry

BDX53C

Iskra Semic Capacitors Industry

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
3001 by Asi Semiconductor

3001

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 175 Cel;
2N3055H by Semiconductors

2N3055H

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP32C by Iskra Semic Capacitors Industry

TIP32C

Iskra Semic Capacitors Industry

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP115 by Tt Electronics Plc

TIP115

Tt Electronics Plc

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP110 by Intersil

TIP110

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
MMBT2907A by Sinyork

MMBT2907A

Sinyork

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
2N2907A by Tesla Elektronicke Soucastky

2N2907A

Tesla Elektronicke Soucastky

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BD139 by Philips Semiconductors

BD139

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BD139-16 by Comset Semiconductors

BD139-16

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;
BU508AW by Inchange Semiconductor

BU508AW

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
BUX87 by Philips Semiconductors

BUX87

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
BC548 by Semiconductors

BC548

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BSR16 by Philips Semiconductors

BSR16

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): .6 A;
BC847C by Secos

BC847C

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
IRLML6402PBF by Infineon Technologies

IRLML6402PBF

Infineon Technologies

Infineon's IRLML6402PBF is a P-CHANNEL MOSFET with 3.7A max drain current and 1.3W power dissipation. Ideal for enhancement mode operation in surface mount applications, it can handle up to 150°C operating temperature, making it suitable for various electronic devices.
2N7002DW-G by Weitron Technology

2N7002DW-G

Weitron Technology

Other Transistors;
BC337-40 by Vishay Intertechnology

BC337-40

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250;
BC817-25 by Allegro MicroSystems

BC817-25

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);