Renesas Electronics - UPC2792TB

  1. Home
  2. Renesas Electronics - UPC2792TB
UPC2792TB by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPC2792TB
Description WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Gain: 17 dB; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1200 MHz; Additional Features: HIGH RELIABILITY;
Datasheet UPC2792TB Datasheet
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Characteristic Impedance: 50 ohm
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1200 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -40 Cel
Gain: 17 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MAAM28000-A1G by TE Connectivity

MAAM28000-A1G

TE Connectivity

MAAM28000-A1G by TE Connectivity is a GAAS RF amplifier with 10V power supply, 8 terminals, and max operating temp of 100°C. Its ceramic package body material and surface mounting feature make it ideal for high-frequency applications in telecommunications and radar systems.
MAAM-011290-DIE by M/a-com Technology Solutions

MAAM-011290-DIE

M/a-com Technology Solutions

MAAM-011290-DIE by M/a-com Technology Solutions is a wide band medium power RF amplifier with 16.5 dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.58, suitable for surface mount applications in RF & microwave systems.
HMC460LC5TR by Hittite Microwave

HMC460LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
TQP7M9102-PCB2600 by Qorvo

TQP7M9102-PCB2600

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
HMC564LC4 by Analog Devices

HMC564LC4

Analog Devices

Analog Devices' HMC564LC4 is a wideband low power RF amplifier with 14dB gain, operating from 7-14GHz. It has a max input power of 20dBm and operates on a 3V supply, drawing 75mA. This ceramic-packaged component is ideal for high-frequency applications requiring surface mount installation.
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
MGA-82563-TR1G by Agilent Technologies

MGA-82563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);
MSA-1105-STR by Broadcom

MSA-1105-STR

Broadcom

Broadcom's MSA-1105-STR is a RF & Microwave Amplifier with 10 dB gain, 50 ohm impedance, and 1.7 max VSWR. Ideal for wideband low power applications from 50 MHz to 1300 MHz, it operates at 5.5V with a max input power of 13 dBm.
MGA-81563-TR1 by Hewlett Packard

MGA-81563-TR1

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;
RF5110GSR by Qorvo

RF5110GSR

Qorvo

Qorvo's RF5110GSR is a wideband medium power amplifier with 33dB gain, operating from 150MHz to 960MHz. It has a max input power of 13dBm and VSWR of 10, suitable for RF & microwave applications requiring high performance in a compact form factor. The hybrid construction and surface mount feature make it ideal for various communication systems.
HMC606LC5 by Hittite Microwave

HMC606LC5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
SGA3463Z by Qorvo

SGA3463Z

Qorvo

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
CMPA5585030F by Wolfspeed

CMPA5585030F

Wolfspeed

WIDE BAND LOW POWER;
MAX2640EUT-T by Maxim Integrated

MAX2640EUT-T

Maxim Integrated

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.
6003 by Teledyne Technologies

6003

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;
BGU7004,115 by NXP Semiconductors

BGU7004,115

NXP Semiconductors

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.
ADL8107ACPZN-R7 by Analog Devices

ADL8107ACPZN-R7

Analog Devices

ADL8107ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 18dB gain, operating from 6-18GHz. It has a max input power of 22dBm and VSWR of 1.54, suitable for wideband low-power applications in RF & microwave systems. With surface mount construction and 8 terminals, it operates b/w -40 to 85°C with a +5V supply.
RFPA3800TR7 by Qorvo

RFPA3800TR7

Qorvo

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.
ADL5611ARKZ-R7 by Analog Devices

ADL5611ARKZ-R7

Analog Devices

ADL5611ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 14.3 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 20 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using plastic/epoxy material and features surface mounting for easy installation in electronic systems.
MW7IC2750NBR1 by NXP Semiconductors

MW7IC2750NBR1

NXP Semiconductors

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.