Renesas Electronics - UPC8179TK

The Mini-circuits ERA-3SM is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 3000 MHz. It has a max input power of 13 dBm and VSWR of 1.5, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is designed for surface mount installation and operates within a temperature range of -45 to 85°C.

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

The NXP Semiconductors MMG20241HT1 is a GAAS RF amplifier with 18.4 dB gain, operating from 450 MHz to 3800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems. The component is surface-mountable with matte tin terminals and a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;

Analog Devices' HMC374SC70E is a GAAS RF amplifier with 15dB gain, operating from 300MHz to 3GHz. It has a max input power of 15dBm and operates on a 3.3V supply. This wideband medium-power device is ideal for RF and microwave applications requiring surface mount components.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

Broadcom's MGA-82563-TR1G is a GAAS RF amplifier with 8.8dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates b/w -40°C to 85°C.

Broadcom's AMMP-6220 is a wide band low power RF amplifier with 50 ohm impedance and 18 dB gain. Operating from 6-20 GHz, it features Ni/Pd/Au finish. Ideal for applications requiring high frequency amplification in RF & microwave systems.

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 470 MHz;

SGA-3563 by RF Micro Devices is a wide band low power RF amplifier with a gain of 19.5 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and has a max input power of 18 dBm. This component, made of plastic/epoxy, is commonly used in RF and microwave applications.

MAAL-010704-TR3000 by M/a-com Technology Solutions is a GAAS RF amplifier with 10dB gain, operating from 100MHz to 3500MHz. It has a max input power of 24dBm and operates on 3/5V supplies. Ideal for wideband low-power applications requiring surface mount construction.