Renesas Electronics - UPD48288236FF-EF33-DW1-A

  1. Home
  2. Renesas Electronics - UPD48288236FF-EF33-DW1-A
UPD48288236FF-EF33-DW1-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPD48288236FF-EF33-DW1-A
Description DDR DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 36; JESD-30 Code: R-PBGA-B144;
Datasheet UPD48288236FF-EF33-DW1-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 8MX36
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
No. of Terminals: 144
Maximum Clock Frequency (fCLK): 300 MHz
No. of Words: 8388608 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
Technology: CMOS
JESD-30 Code: R-PBGA-B144
Package Shape: RECTANGULAR
Terminal Form: BALL
Package Code: BGA
Input/Output Type: COMMON
Memory Density: 301989888 bit
Sequential Burst Length: 2,4
Memory IC Type: DDR DRAM
Memory Width: 36
Qualification: Not Qualified
Package Equivalence Code: BGA144,12X18,40/32
No. of Words Code: 8M
Terminal Pitch: .8 mm
Power Supplies (V): 1.5,1.8,2.5
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.
AS4C16M16SA-6TCN by Alliance Memory

AS4C16M16SA-6TCN

Alliance Memory

AS4C16M16SA-6TCN by Alliance Memory is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 16777216 words memory density and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.
S27KS0642GABHB020 by Cypress Semiconductor

S27KS0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;
MT41K128M16JT-125AAT:K by Micron Technology

MT41K128M16JT-125AAT:K

Micron Technology

Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G8WE-075E:B by Micron Technology

MT40A1G8WE-075E:B

Micron Technology

Micron Technology's MT40A1G8WE-075E:B is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A256M16GE-083EIT:B by Micron Technology

MT40A256M16GE-083EIT:B

Micron Technology

Micron Technology's MT40A256M16GE-083EIT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
MT41K256M16HA-125M:E by Micron Technology

MT41K256M16HA-125M:E

Micron Technology

Micron Technology's MT41K256M16HA-125M:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 239 mA at 1.35V. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MT40A2G8SA-062E:F by Micron Technology

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.
MT41K128M8DA-107IT:J by Micron Technology

MT41K128M8DA-107IT:J

Micron Technology

MT41K128M8DA-107IT:J by Micron Technology is a DDR3L DRAM with 128MX8 organization and 1.35V nominal voltage. It operates at a max clock frequency of 933 MHz and is commonly used in applications requiring high-speed memory access, such as servers and high-performance computing systems.
MT61K256M32JE-21:T by Micron Technology

MT61K256M32JE-21:T

Micron Technology

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.
KM424C64Z-10 by Samsung

KM424C64Z-10

Samsung

Samsung's KM424C64Z-10 DRAM features 64KX4 organization, 3-STATE output, and FAST PAGE access mode. Ideal for video applications with 65536 words memory capacity, 100 ns access time, and 262144 bit density. Operates at temperatures b/w 0 to 70 °C.
MT41J128M16JT-125:K by Micron Technology

MT41J128M16JT-125:K

Micron Technology

Micron Technology's MT41J128M16JT-125:K is a DDR3 DRAM with 128MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
IS43TR16256A-125KBLI by Integrated Silicon Solution

IS43TR16256A-125KBLI

Integrated Silicon Solution

IS43TR16256A-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and operates in industrial temperature grade range from -40 to 85 °C. Ideal for applications requiring high memory density and fast access times.
MT48LC8M16A2TG-8E by Micron Technology

MT48LC8M16A2TG-8E

Micron Technology

Micron Technology's MT48LC8M16A2TG-8E is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 125 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory performance in a compact thin profile package.
KVR16LS11/8 by Kingston Technology Company

KVR16LS11/8

Kingston Technology Company

Kingston KVR16LS11/8 is a 1.35V DDR DRAM module with 1GX64 organization, operating at up to 800MHz clock frequency. It features 204 terminals in a rectangular package suitable for microelectronic assembly. Ideal for applications requiring high memory density and fast data access within the temperature range of 0-85°C.
IS42S16160J-6BLI-TR by Integrated Silicon Solution

IS42S16160J-6BLI-TR

Integrated Silicon Solution

IS42S16160J-6BLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has a memory density of 268Mbit, and supports common I/O type. Ideal for industrial applications requiring fast access times and high memory density in compact form factors.
M378B5673FH0-CH9 by Samsung

M378B5673FH0-CH9

Samsung

Samsung M378B5673FH0-CH9 DDR DRAM MODULE features 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT48LC2M32B2P-7:G by Micron Technology

MT48LC2M32B2P-7:G

Micron Technology

Micron Technology's MT48LC2M32B2P-7:G is a 3.3V Synchronous DRAM with 2MX32 organization, offering 2097152 words memory density. It operates at up to 143 MHz clock frequency and has a max access time of 5.5 ns. Ideal for commercial applications requiring high-speed memory performance in compact form factors.
MT40A256M16GE-083EAIT:BTR by Micron Technology

MT40A256M16GE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
MT40A1G8SA-062E:R by Micron Technology

MT40A1G8SA-062E:R

Micron Technology

Micron Technology's MT40A1G8SA-062E:R is a DDR4 DRAM with 1.2V supply voltage, 1GX8 organization, and 1073741824 words capacity. It operates synchronously with self-refresh capability and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.