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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | UPD488130LVN-A45-9 |
Description | RAMBUS DRAM; No. of Terminals: 32; Memory Width: 8; JESD-609 Code: e0; Nominal Supply Voltage / Vsup (V): 3.3; No. of Words: 2097152 words; |
Datasheet | UPD488130LVN-A45-9 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Input/Output Type: | COMMON |
Memory Density: | 16777216 bit |
Maximum Standby Current: | .125 Amp |
Organization: | 2MX8 |
Output Characteristics: | 3-STATE |
Sub-Category: | DRAMs |
Surface Mount: | YES |
Maximum Supply Current: | 440 mA |
Memory IC Type: | RAMBUS DRAM |
Terminal Finish: | Tin/Lead (Sn/Pb) |
JESD-609 Code: | e0 |
Memory Width: | 8 |
No. of Terminals: | 32 |
Maximum Clock Frequency (fCLK): | 225 MHz |
No. of Words: | 2097152 words |
Qualification: | Not Qualified |
Package Equivalence Code: | SMSIP32,25 |
Terminal Position: | SINGLE |
Technology: | CMOS |
No. of Words Code: | 2M |
Nominal Supply Voltage / Vsup (V): | 3.3 |
Terminal Pitch: | 2.54 mm |
Power Supplies (V): | 3.3 |