Renesas Electronics - UPG2301T5L-E2-A

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.

XP1039-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF & microwave amplifier with a gain of 15.5 dB. It operates in the frequency range of 5600 MHz to 7100 MHz and can handle a max input power of 25 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Gain: 17 dB; Maximum Operating Frequency: 2800 MHz;

Qorvo's QPA2225D is a GAN technology RF amplifier with 23 dB gain, operating from 28-38 GHz. It offers 18 dBm CW input power, VSWR of 3, and operates on a 20V supply. Ideal for wideband medium-power applications in RF & microwave systems.

WIDE BAND LOW POWER;

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.

Analog Devices' HMC478SC70E is a wide band low power RF amplifier with 23 dB gain and 5 dBm CW input power. Operating from -40 to 85°C, it has a max frequency of 4 GHz. Ideal for RF & microwave applications, this component features a plastic/epoxy package and requires a 5V supply at 82 mA.

WIDE BAND LOW POWER;

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

WIDE BAND LOW POWER;

Qorvo's SPF-5189Z is a GAAS RF amplifier with 11.3 dB gain, operating from 50 MHz to 4 GHz. It has a max input power of 27 dBm and operates on a 5V supply. Ideal for wideband medium-power applications, it features surface mounting and a plastic/epoxy package body.

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.

NARROW BAND LOW POWER;

Qorvo's TGA2227-SM is a wide band medium power RF amplifier with 15.7 dB gain, operating from 2-22 GHz. It can handle up to 40 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.

SKY65624-682LF by Skyworks Solutions is a RF amplifier with 16dB gain, operating frequency range of 1559-1606MHz. It has VSWR of 1.5, BICMOS technology, and can handle up to 0dBm input power. Ideal for narrowband low-power applications in RF & microwave systems due to its compact size and surface mount feature.

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.