ROHM - 2SB1316TL

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2SB1316TL by ROHM

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Manufacturer ROHM
Manufacturer's Part Number 2SB1316TL
Description PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
Datasheet 2SB1316TL Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 50 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN COPPER
No. of Terminals: 2
Maximum Power Dissipation (Abs): 2 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 10 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 1000
JESD-609 Code: e2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Additional Features: BUILT-IN BIAS RESISTOR
Peak Reflow Temperature (C): 260
Maximum VCEsat: 1.5 V
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