ROHM - BA12003BF-E2

  1. Home
  2. ROHM - BA12003BF-E2
BA12003BF-E2 by ROHM

Image shown is a representation only.

Manufacturer ROHM
Manufacturer's Part Number BA12003BF-E2
Description Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet BA12003BF-E2 Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC846BDW1T1G by Onsemi

BC846BDW1T1G

Onsemi

BC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, DC current gain of 200, and operates up to 150°C. This small outline transistor in gull wing package offers high performance in compact designs.
2N2222AUBC by Microsemi

2N2222AUBC

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BC547CT&A by Continental Device India

BC547CT&A

Continental Device India

BC547CT&A by Continental Device India is a NPN BJT transistor with hFE of 420, IC of 0.1A, and fT of 300MHz. It is used for switching applications in circuits requiring a max VCE of 45V and Pd of 0.625W. The package style is cylindrical with matte tin finish suitable for through-hole mounting.
BC847-C by Samsung

BC847-C

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
MMBT3906 by NXP Semiconductors

MMBT3906

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
SMMBT2222ALT3G by Onsemi

SMMBT2222ALT3G

Onsemi

SMMBT2222ALT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high DC current gain of 75 (hFE), low power dissipation of 0.3W, and fast turn-on/off times of 35ns/285ns. Its Gull Wing terminals and compact rectangular package make it suitable for surface mount designs.
2N2907A by Good-ark Electronics

2N2907A

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3906 by Microsemi

2N3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3904 by Comchip Technology

MMBT3904

Comchip Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N2907A by Diotec Semiconductor Ag

2N2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;
BC846BPDW1T1G by Onsemi

BC846BPDW1T1G

Onsemi

BC846BPDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types. It has a max VCEsat of 0.65V, hFE of 200, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and dual terminal position for surface mount assembly.
BC847C by ROHM

BC847C

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-40W,115 by NXP Semiconductors

BC817-40W,115

NXP Semiconductors

NXP Semiconductors' BC817-40W,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it has a transition frequency of 100MHz making it suitable for high-speed switching circuits.
2N2222A by Diotec Semiconductor Ag

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
BC847,215 by NXP Semiconductors

BC847,215

NXP Semiconductors

NXP Semiconductors' BC847,215 is a NPN BJT transistor with VCEsat of 0.6V, hFE of 110, and IC of 0.1A. Ideal for switching applications in small outline packages with 3 terminals. Operates at max temp of 150°C and has a transition frequency of 100MHz.
2N2907A by Semitronics

2N2907A

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
MMBT2222A by National Semiconductor

MMBT2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
BC846B by Micro Commercial Components

BC846B

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BC847C by Vishay Semiconductors

BC847C

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
2N3906 by Vishay Sprague

2N3906

Vishay Sprague

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;