BD14000EFV-CE2 by ROHM | Other Function Semiconductors

Image shown is a representation only.

Manufacturer	ROHM
Manufacturer's Part Number	BD14000EFV-CE2
Description	POWER SUPPLY SUPPORT CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 30; Package Code: HVSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Datasheet	BD14000EFV-CE2 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Width (mm):	5.6 mm
Maximum Seated Height:	1 mm
Minimum Supply Voltage (Vsup):	8 V
Maximum Supply Current (Isup):	.08 mA
Sub-Category:	Power Management Circuits
Surface Mount:	YES
No. of Terminals:	30
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH
JESD-30 Code:	R-PDSO-G30
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	105 Cel
No. of Channels:	1
Package Code:	HVSSOP
Nominal Supply Voltage (Vsup):	15 V
Other Names:	BD14000EFV-CE2TR BD14000EFV-CE2DKR BD14000EFV-CE2CT
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP30,.3
Other IC type:	POWER SUPPLY SUPPORT CIRCUIT
Length:	10 mm
Adjustable Threshold:	NO
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.65 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	24 V
Power Supplies (V):	15

Popular Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;