BD95831MUV-E2 by ROHM | Other Function Semiconductors

Image shown is a representation only.

Manufacturer	ROHM
Manufacturer's Part Number	BD95831MUV-E2
Description	SWITCHING REGULATOR; Temperature Grade: OTHER; No. of Terminals: 16; Package Code: HVQCCN; Package Shape: SQUARE; Surface Mount: YES;
Datasheet	BD95831MUV-E2 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Nominal Output Voltage:	3.3 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Width (mm):	3 mm
Maximum Seated Height:	1 mm
Surface Mount:	YES
Switcher Config:	BUCK
No. of Terminals:	16
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
JESD-30 Code:	S-XQCC-N16
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	100 Cel
Package Code:	HVQCCN
Maximum Switching Frequency:	800 kHz
Other Names:	BD95831MUV-E2CT BD95831MUV-E2TR BD95831MUV-E2DKR
Minimum Input Voltage:	7.5 V
Maximum Input Voltage:	15 V
Minimum Operating Temperature:	-20 Cel
No. of Functions:	1
Nominal Input Voltage:	12 V
Other IC type:	SWITCHING REGULATOR
Length:	3 mm
Additional Features:	OUTPUT VOLTAGE RANGE FROM 0.8 V TO 5.5 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.5 mm
Temperature Grade:	OTHER

Popular Products

RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;

MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.

The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.