BSM120D12P2C005 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	BSM120D12P2C005
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON CARBIDE;
Datasheet	BSM120D12P2C005 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	240 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	NO
No. of Terminals:	8
Maximum Power Dissipation (Abs):	780 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	120 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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