ROHM - C-33

  1. Home
  2. ROHM - C-33
C-33 by ROHM

Image shown is a representation only.

Manufacturer ROHM
Manufacturer's Part Number C-33
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): UNCASED CHIP;
Datasheet C-33 Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 15 dB
Nominal Transition Frequency (fT): 1000 MHz
Other Names: 1664120
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 3 pF
Maximum VCEsat: .4 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

934063132115 by NXP Semiconductors

934063132115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;
MSC2295-BT1 by Onsemi

MSC2295-BT1

Onsemi

The Onsemi MSC2295-BT1 is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max operating temp of 150 °C, fT of 150 MHz, and hFE of 70. The package is small outline with gull wing terminals, suitable for surface mount assembly.
BFG21W,115 by NXP Semiconductors

BFG21W,115

NXP Semiconductors

NXP Semiconductors BFG21W,115 is an NPN RF BJT transistor with 18000 MHz fT. It has a max power dissipation of 0.67 W and operates at up to 150 °C. Ideal for amplifier applications in the ultra-high frequency band, this transistor features a small outline package with GULL WING terminals.
BFS17W by Siemens

BFS17W

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Package Style (Meter): SMALL OUTLINE;
HFA3127RZ by Intersil

HFA3127RZ

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
2N918 by NXP Semiconductors

2N918

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: METAL;
HFA3096BZ96 by Intersil

HFA3096BZ96

Intersil

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;
NESG260234-T1-AZ by Renesas Electronics

NESG260234-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;
MPS3640 by NXP Semiconductors

MPS3640

NXP Semiconductors

NXP Semiconductors' MPS3640 is a PNP BJT transistor with 3 terminals, ideal for switching applications in the UHF band. Featuring a max. collector-emitter voltage of 12V, fT of 500MHz, and IC of 0.08A, it offers high performance in a cylindrical package suitable for through-hole mounting.
BFR93AW by Infineon Technologies

BFR93AW

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .09 A;
MPSA10RLRP by Onsemi

MPSA10RLRP

Onsemi

MPSA10RLRP by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It features a max Vce of 25V, fT of 650MHz, and low Ccb of 0.7pF. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.
MMBTH17LT1 by Onsemi

MMBTH17LT1

Onsemi

MMBTH17LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for ultra-high frequency band applications like amplifiers, featuring a small outline package with gull wing terminals. The transistor's silicon element material ensures high performance in RF signal amplification.
SS9018FBU by Onsemi

SS9018FBU

Onsemi

SS9018FBU by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 15V and fT of 1100MHz. Ideal for amplifier applications, it has a max power dissipation of 0.4W and operates at temperatures up to 150°C in the very high-frequency band.
2N5109 by Asi Semiconductor

2N5109

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
BFR183E6327HTSA1 by Infineon Technologies

BFR183E6327HTSA1

Infineon Technologies

BFR183E6327HTSA1 by Infineon Technologies is an NPN RF Small Signal BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 8000MHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package style and Gull Wing terminal form for surface mount assembly.
MPS3640 by National Semiconductor

MPS3640

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
START420TR by STMicroelectronics

START420TR

STMicroelectronics

START420TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.18 W, operates up to 150 °C, and supports C band frequencies. This compact surface mount transistor ensures efficient performance in electronic circuits.
MPSH10RLRP by Onsemi

MPSH10RLRP

Onsemi

MPSH10RLRP by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.35W and operates in the ultra-high frequency band.
MPSH10 by Onsemi

MPSH10

Onsemi

The Onsemi MPSH10 is an NPN RF BJT transistor with a max fT of 650 MHz, ideal for amplifier applications. With a max IC of 0.1A and hFE of 60, it operates at up to 150°C. Its package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.
BFY90 by Tt Electronics Plc

BFY90

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: O-MBCY-W4;