DTB113ECHZGT116 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	DTB113ECHZGT116
Description	PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;
Datasheet	DTB113ECHZGT116 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Moisture Sensitivity Level (MSL):	1
Other Names:	846-DTB113ECHZGT116CT 846-DTB113ECHZGT116TR 846-DTB113ECHZGT116DKR
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	33
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT IN BIAS RESISTANCE RATIO IS 1.0
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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